Inverted Metallurgical Microscope
ECLIPSE MA200
Inverted Metallurgical Microscope
ECLIPSE MA100N
More Information
More Information
Inverted Metallurgical Microscope
ECLIPSE MA200
Inverted Metallurgical Microscope
ECLIPSE MA100N
More Information
More Information

NES1W-h04 • NES1W-h04A

  • Satisfy fab-specific objectives with diverse product capabilities
These popular steppers are well suited for back-end processes, as well as MEMS and LED applications, delivering overlay performance and throughput to meet unique fab objectives and product-specific requirements. Customers may choose to add on backside alignment (BSA) functionality to enable precise alignment to marks located on the backside of the wafer surface. The newly developed backside alignment system incorporates both direct and infra-red alignment capabilities. The NES1W-h04/NES1W-h04A enable BSA below 0.8 µm.

  • Enable resolution below 2 µm with increased lens NAs 
Some of the today’s applications require increased lens numerical aperture (NA) and the NES1W-h04 utilizes a 0.16 NA and delivers resolution ≤ 2 µm. To satisfy even more challenging imaging requirements, the NES1W-h04A has a 0.20 NA to enable 1.6 µm resolution, with champion imaging performance down to 1 µm. 

  • Deliver large depth of focus for enhanced yield
These steppers utilize projection lenses with a 2.5x reduction that were specifically designed to address the unique process challenges presented by backend-processes, as well as MEMS and LED applications. They deliver a large depth of focus, while their advanced autofocus systems provide die-by-die autofocus capabilities that further increase yield for these difficult processes.

  • Provide optimal productivity and comply with global safety specifications.
These high-throughput systems can process up to 63 wafers per hour (57 exposure shots at 15 mm step pitch), and provide great flexibility with support for wafer sizes up to 150 mm. In addition, these steppers reduce reticle costs with the Dual Exposure Area for a Single Reticle function, which makes it possible to utilize two separate exposure patterns on a single reticle by rotating the reticle according to programmable settings. Reticle blinds are then used to control the actual exposure area. These steppers also minimize total fab costs with total fab footprints below 3.3 m². In addition to delivering these critical productivity benefits to ensure low cost of ownership for manufacturers, this stepper also satisfies global safety compliance specifications.
Specifications
  • Wavelength (nm): 405
  • Lens-NA: 0.16 (NES1W-h04A: 0.20)
  • Exposure Area (mm): 15 mm square to 11.23 (H) x 18 (V) mm
  • Reduction Ratio: 1/2.5
  • Resolution (µm): 2.0 (NES1W-h04A: 1.6, Champion data: 1.4)
  • Depth of Focus (µm): 16 (NES1W-h04A: 10)
  • Overlay Accuracy (µm): 0.30
  • Throughput: 150 mm: 63 WPH
  • Wafer Size (mm): ≤ 150
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