Description
GB-20S is a panel-level high-speed die bonder that operates on the principle of batch die bonding. It pre-arranges the die on the bonding head before performing the entire group bonding process, achieving high-speed die bonding performance on large substrates. It can operate on substrates pre-coated with adhesive material, solder paste, flux, or double-sided adhesive film. The die tape frame can automatically load and unload, while the substrate requires manual loading and unloading.
- Adopts the operation mode of pre-arranging and then bonding the entire group of dies, meeting the high production capacity requirements on large substrates.
- The bonding compression time is relatively sufficient compared to single die operations, which can improve adhesive reliability.
- The main spindle adopts linear motor drive to maintain long-term accuracy in picking and placing.
- Immediate confirmation of picking status after picking to eliminate potential subsequent damage caused by picking errors.
- Immediate inspection of placement results after pre-arrangement.
- Flip and non-flip dual-use.
Product Specifications
- Wafer Size: 12” on standard DISCO frame. Optional: 8” on standard DISCO frame.
- Chip Size: 1.0 x 1.0mm ~ 7.0 x 7.0mm, T = 0.1 ~ 1.0mm.
- Substrate: 600mm x 600mm, 300mm x 300mm, Ø300mm (optional module). Requires pre-coating with adhesive material or application of double-sided adhesive film.
- Bonding Tool: Bonding head sized 40 x 40mm ~ 80 x 80mm. Custom-designed tool shape.
- Bonding Accuracy: X/Y: ≤±10μm, θ ≤0.1° @ 3σ, chip size 1.0 x 1.0mm.
- Throughput: Flip chip operation: 10kUPH @ chip size 1.0 x 1.0mm. Non-flip operation: 10kUPH @ chip size 1.0 x 1.0mm.
- Bonding Force: Bonding head downward force: 0.5N ~ 200N. Bonding head area: 40 x 40mm ~ 80 x 80mm. Bonding head downward force programmable, with real-time monitoring.
- Secondary Press Force: Press head downward force: 0.5N ~ 200N. Press head area: Capable of applying pressure to a row of dies within the matrix. Press head downward force programmable, with real-time monitoring.
- Substrate Heating: Maximum 150°C, accuracy ≤±5°C.