Fan-out GB-30

  • Panel-level high-speed die bonder that operates on the principle of batch die bonding. It pre-arranges the die on the bonding head before performing the entire group bonding process.

Description

GB-30 is a panel-level high-speed die bonder that operates on the principle of batch die bonding. It pre-arranges the die on the bonding head before performing the entire group bonding process, achieving high-speed die bonding performance on large substrates. It can operate on substrates pre-coated with adhesive material, solder paste, flux, or covered with double-sided adhesive film. It features a pre-arranged block exchange function, enhancing the collaboration efficiency between the pre-arrangement system and the bonding system, maximizing the productivity of the pre-arranged die bonding method.

The GB-30 is ideal for high-speed die bonding on large substrates, particularly in scenarios where batch processing and high throughput are critical. Its ability to handle various substrate types and bonding materials makes it suitable for a wide range of applications, from consumer electronics to industrial components.

  • Flip-chip (face-down)/non-flip (face-up) dual-use.
  • Adopts the principle of massive transfer, with a single transfer quantity of 200 dies or more (depending on die size).
  • Features drop point shrinkage and irregular drop point transfer arrangement functions.
  • Equipped with a pre-arranged single die re-picking and correction function for drop points.
  • Features Multi Die production mode. • SECSGEM (optional).
  • Comprehensive production report output and trace-back function.

Product Specifications

  • Wafer Size: 12” on standard DISCO frame (8” optional).
  • Chip Size: 0.5 x 0.5mm ~ 7.0 x 7.0mm, T = 0.05 ~ 0.7mm.
  • Substrate: 600mm x 600mm, 300mm x 300mm, Ø300mm, pre-coated with adhesive material or covered with double-sided adhesive film.
  • Bonding Tool: 40 x 40mm ~ 100 x 100mm batch die bonder head. Custom-designed tool shape.
  • Bonding Accuracy: X/Y: ≤±10μm, θ ≤0.1° @ 3σ, chip size 3.0 x 3.0mm, Thickness 350μm.
  • Throughput: >20kUPH @ chip size 3.0 x 3.0mm (Flip and Non-flip operations are the same).
  • Bonding Force: Bonding head downward pressure: 0.5N ~ 600N. Bonding head area: 40 x 40mm ~ 80 x 80mm. Bonding head downward pressure can be set by the program and monitored in real-time.
  • Substrate Heating: Up to 150℃, error ≤±5℃.

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